
- 产品介绍
硅基半导体
化合物
科研院所
. 磁场增强反应离子刻蚀,工艺窗口宽
Magnetically Enhanced Reactive IonEtching (MERIE), Wide process window
. 双极性陶瓷静电卡盘,配备双区背氦冷却系统,高刻蚀均匀性
Bi-polar ceramic ESC with Dual Zonebackside helium cooling ,Better etch uniformity
. 可控温的腔室内衬,配备自清洁功能,更长的保养周期
Temperature controlled chamber linerwith Auto Dry Clean function, Long MTBC
. 本土化客制服务,持续的工艺开发支持
Localized customization service,Continuous process development support
. 易保养,高产能,低运维成本
Easy maintenance ,Higher productivity and Lower CoC
. 晶圆尺寸: 6/8英寸
Wafer size: 6”/ 8”compatible
. 适用材料: 氧化硅,氮化硅,氮氧化硅
Applicable material: SiO2, Si3N4, SiOxNy
. 适用工艺: 硬掩模刻蚀、侧墙刻蚀、平坦化、接触孔刻蚀、通孔刻蚀、自对准刻蚀、钝化层刻蚀等
Applicable process: HMO etch, Spacer etch, Planar etch, Contact etch, Via etch, SAB etch, Passivation etch, etc.